Patent · US Active

Write training in memory devices by adjusting delays based on data patterns

US11733887B2 · kind B2 · utility

0Cited by
14References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 11, 2021
Grant dateAug 22, 2023
Priority date
Expiry dateJul 2, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2207/2254
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory device includes a plurality of input/output (I/O) nodes, a circuit, a latch, a memory, and control logic. The plurality of I/O nodes receive a predefined data pattern. The circuit adjusts a delay for each I/O node as the predefined data pattern is received. The latch latches the data received on each I/O node. The memory stores the latched data. The control logic compares the stored latched data to an expected data pattern and sets the delay for each I/O node based on the comparison.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.