Method for forming a bioFET sensor including semiconductor fin or nanowire
US11735645B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 16, 2020 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Mar 10, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/414
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for forming a sensor is provided. The method includes: providing an active region comprising a channel having: a length, and a periphery consisting of one or more surfaces having said length, said periphery comprising a first part and a second part, each part having said length, the first part representing from 10 to 75% of the area of the periphery and the second part representing from 25 to 90% of the area of the periphery; providing a first dielectric structure on the entire first part, the first dielectric structure having a maximal equivalent oxide thickness; and providing a second dielectric structure on the entire second part, the second dielectric structure having a minimal equivalent oxide thickness larger than the maximal equivalent oxide thickness of the first dielectric structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.