Field effect transistors having ferroelectric or antiferroelectric gate dielectric structure

US11735652B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Seiyon Kim · Portland, US
• Uygar E. Avci · Portland, US
• Joshua M. Howard · Portland, US
• Ian A. Young · Portland, US
• Daniel H. Morris · Hillsboro, US

Key dates

• Filing date: Sep 28, 2017
• Grant date: Aug 22, 2023
• Expiry date: Feb 15, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/689

Abstract

Field effect transistors having a ferroelectric or antiferroelectric gate dielectric structure are described. In an example, an integrated circuit structure includes a semiconductor channel structure includes a monocrystalline material. A gate dielectric is over the semiconductor channel structure. The gate dielectric includes a ferroelectric or antiferroelectric polycrystalline material layer. A gate electrode has a conductive layer on the ferroelectric or antiferroelectric polycrystalline material layer, the conductive layer including a metal. A first source or drain structure is at a first side of the gate electrode. A second source or drain structure is at a second side of the gate electrode opposite the first side.