Integrated assemblies and methods of forming integrated assemblies

US11735672B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Aaron Michael Lowe · Boise, US
• Zhuo Chen · Beijing, CN
• Marko Milojevic · Boise, US
• Timothy A. Quick · Boise, US
• Richard J. Hill · Boise, US
• Scott E. Sills · Boise, US

Key dates

• Filing date: Mar 29, 2021
• Grant date: Aug 22, 2023
• Expiry date: Jun 5, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/482

Abstract

Some embodiments include an integrated transistor having an active region comprising semiconductor material. A conductive gating structure is adjacent to the active region. The conductive gating structure includes an inner region proximate the active region and includes an outer region distal from the active region. The inner region includes a first material containing titanium and nitrogen, and the outer region includes a metal-containing second material. The second material has a higher conductivity than the first material. Some embodiments include integrated assemblies. Some embodiments include methods of forming integrated assemblies.