Patent · US Active

Memory read circuitry with a flipped voltage follower

US11742012B2 · kind B2 · utility

0Cited by

8References

21Claims

0Family size

Assignee

NXP USA, Inc. · US

Inventors

Karthik Ramanan · Austin, US
Jon S. Choy · Austin, US
Padmaraj Sanjeevarao · Austin, US

Key dates

Filing date	May 28, 2021
Grant date	Aug 29, 2023
Priority date	—
Expiry date	Oct 8, 2041

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/82
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory includes read circuitry for reading values stored in memory cells. The read circuitry includes flipped voltage followers for providing bias voltages to nodes of current paths coupled to sense amplifiers during memory read operations.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.