Directional deposition in etch chamber
US11742212B2 · kind B2 · utility
0Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2019 |
| Grant date | Aug 29, 2023 |
| Priority date | — |
| Expiry date | Oct 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67748
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a vertical growth mask for use in etching applications are described herein. Disclosed embodiments include introducing a tungsten-containing deposition precursor and one or more carrier gases while igniting a plasma to deposit tungsten selectively on field regions of positive features of a patterned etch mask without substantial deposition on sidewalls of the positive features or on an exposed surface of a target layer underlying the patterned etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.