Ion filter using aperture plate with plurality of zones
US11747494B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2020 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Jul 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/78
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for using ion filtering to adjust the number of ions delivered to a substrate. The method comprising a process chamber being provided that is operatively connected to a plasma source. The substrate is provided on a substrate support that is provided within the process chamber. An electrical bias source is provided that is operatively connected to an aperture plate that is provided in the process chamber. The substrate on the substrate support is processed using a plasma generated using the plasma source. A variable bias voltage from the electrical bias source is applied to the aperture plate during the plasma processing of the substrate. The plasma processing of the substrate can further comprise exposing the substrate to a plasma time division multiplex process which alternates between deposition and etching on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.