Field effect transistor with source-connected field plate

US11749726B2 · kind B2 · utility

Assignee

• Wolfspeed, Inc. · US

Inventors

• Kyle Bothe · Cary, US
• Jeremy Fisher · Raleigh, US
• Matt King · Palo Alto, US
• Jia Guo · Apex, US
• Qianli Mu · San Jose, US
• Scott Sheppard · Chapel Hill, US

Key dates

• Filing date: May 20, 2021
• Grant date: Sep 5, 2023
• Expiry date: Aug 18, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/411

Abstract

A transistor device includes a semiconductor layer, source and drain contacts on the semiconductor layer, a gate contact on the semiconductor layer between the source and drain contacts, and a field plate over the semiconductor layer between the gate contact and the drain contact. The transistor device includes a first electrical connection between the field plate and the source contact that is outside an active region of the transistor device, and a second electrical connection between the field plate and the source contact.