Bipolar junction transistors with duplicated terminals
US11749727B2 · kind B2 · utility
0Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2021 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | Jan 15, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/891
Abstract
Structures for a bipolar junction transistor and methods of fabricating a structure for a bipolar junction transistor. The structure includes a first base layer, a second base layer, a first terminal positioned between the first base layer and the second base layer, a second terminal, and a third terminal. The first base layer, the second base layer, and the first terminal are positioned between the second terminal and the third terminal. For example, the first terminal may be positioned in a vertical direction between the first and second base layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.