Method for fabricating semiconductor device with metal spacers
US11756885B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 23, 2021 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Feb 10, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application discloses a method for fabricating a semiconductor device with metal spacers. The method includes providing a substrate; forming a plurality of plugs above the substrate; forming a plurality of metal spacers above the plurality of plugs; and, forming a plurality of air gaps positioned between the plurality of plugs; wherein the step of forming wherein the plurality of metal spacers comprises forming a first set of metal spacers, forming a second set of metal spacers, forming a third set of metal spacers, and forming a fourth set of metal spacers; wherein the second set of metal spacers is formed between the first set of metal spacers and the third set of metal spacers, and the third set of metal spacers is formed between the second set of metal spacers and the fourth set of metal spacers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.