Backside floating metal for increased capacitance
US11756887B2 · kind B2 · utility
1Cited by
11References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 22, 2021 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Sep 2, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/481
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure with one or more backside metal layers that include a plurality of portions of a floating metal layer separated by dielectric material from one or more power and ground lines in the backside metal layer. The height of each of the plurality of portions of the floating metal layer in each of the one or more backside metal layers and the distance between adjacent portions of the plurality of portions of the floating metal layer in each of the one or more backside metal layer correlates to the capacitance of each of the one or more backside metal layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.