High density and durable semiconductor device interconnect

US11756923B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Marian Sebastian Broll · Soest, DE
• Barbara Eichinger · Villach, AT
• Alexander Herbrandt · Warstein, DE
• Alparslan Takkac · Meschede, DE

Key dates

• Filing date: Sep 1, 2021
• Grant date: Sep 12, 2023
• Expiry date: Jan 26, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/181
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a semiconductor device includes providing a carrier comprising a die attach pad, providing a semiconductor die that includes a bond pad disposed on a main surface of the semiconductor die, and providing a metal interconnect element, arranging the semiconductor die on the die attach pad such that the bond pad faces away from the die attach pad, and welding the metal interconnect element to the bond pad, wherein the bond pad comprises first and second metal layers, wherein the second metal layer is disposed between the first metal layer and a semiconductor body of the semiconductor die, wherein a thickness of the first metal layer is greater than a thickness of the second metal layer, and wherein the first metal layer has a different metal composition as the second metal layer.