Backside illumination image sensors
US11756977B2 · kind B2 · utility
0Cited by
6References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2018 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Jul 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Implementations of image sensor devices may include a through-silicon-via (TSV) formed in a backside of an image sensor device and extending through a material of a die to a metal landing pad. The metal landing pad may be within a contact layer. The devices may include a TSV edge seal ring surrounding a portion of the TSV in the contact layer and extending from a first surface of the contact layer into the contact layer to a depth coextensive with a depth of the TSV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.