Carbon-doped silicon single crystal wafer and method for manufacturing the same
US11761118B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2020 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Oct 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1223
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a carbon-doped silicon single crystal wafer, including steps of: preparing a silicon single crystal wafer not doped with carbon; performing a first RTA treatment on the silicon single crystal wafer in an atmosphere containing compound gas; performing a second RTA treatment at a higher temperature than the first RTA treatment; cooling the silicon single crystal wafer after the second RTA treatment; and performing a third RTA treatment. The crystal wafer is modified to a carbon-doped silicon single crystal wafer, sequentially from a surface thereof: a 3C-SiC single crystal layer; a carbon precipitation layer; a diffusion layer of interstitial carbon and silicon; and a diffusion layer of vacancy and carbon. A carbon-doped silicon single crystal wafer having a surface layer with high carbon concentration and uniform carbon concentration distribution to enable wafer strength enhancement; and a method for manufacturing the carbon-doped silicon single crystal wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.