Patent · US Active

Wafer-scale programmable films for semiconductor planarization and for imprint lithography

US11762284B2 · kind B2 · utility

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9References
9Claims
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Key dates

Filing dateAug 3, 2017
Grant dateSep 19, 2023
Priority date
Expiry dateOct 8, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01Q60/24
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method for fabricating patterns. An inverse optimization scheme is implemented to determine process parameters used to obtain a desired film thickness of a liquid resist formulation, where the liquid resist formulation includes a solvent and one or more non-solvent components. A substrate is covered with a substantially continuous film of the liquid resist formulation using one or more of the following techniques: dispensing discrete drops of a diluted monomer on the substrate using an inkjet and allowing the dispensed drops to spontaneously spread and merge, slot die coating and spin-coating. The liquid resist formulation is diluted in the solvent. The solvent is then substantially evaporated from the liquid resist formulation forming a film. A gap between a template and the substrate is then closed. The film is cured to polymerize the film and the substrate is separated from the template leaving the polymerized film on the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.