Etching method and etching apparatus
US11764070B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2021 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Jul 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76888
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method includes: providing, in a chamber, a substrate including a structure including a first film selected from a molybdenum film and a tungsten film; performing a first etching on the first film by supplying an oxidation gas and a first gas selected from a MoF6 gas and a WF6 gas into the chamber; when a pore present inside the first film is exposed by the first etching, filling the pore with one of molybdenum and tungsten by stopping the first etching and supplying a reduction gas and a second gas selected the MoF6 gas and the WF6 gas into the chamber; and performing a second etching on a filling layer formed in the filling and the first film by supplying the oxidation gas and a third gas selected from the MoF6 gas and the WF6 gas into the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.