Semiconductor device and method of manufacturing the same
US11764272B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2021 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Sep 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/2527
Abstract
The disclosure relates to a semiconductor device having a first active region, a plurality of elongated gate regions having an elongated extension in a first lateral direction, respectively, a plurality of elongated field plate regions having an elongated extension in the first lateral direction, respectively, and a first additional gate region, wherein a first one of the elongated gate regions is arranged in a first elongated gate trench at a first side of the first active region, and a second one of the elongated gate regions is arranged in a second elongated gate trench at a second side of the first active region, the second side lying opposite to the first side with respect to a second lateral direction, and wherein the first additional gate region is arranged in a first additional gate trench which extends at least proportionately in the second lateral direction through the first active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.