Semiconductor structure with capacitor landing pad and method of making the same
US11765881B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Dec 7, 2022 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Dec 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure with a capacitor landing pad includes a substrate. A capacitor contact plug is disposed on the substrate. A capacitor landing pad contacts and electrically connects the capacitor contact plug. A bit line is disposed on the substrate. A dielectric layer surrounds the capacitor landing pad. The dielectric layer includes a bottom surface lower than a top surface of the bit line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.