Method of reducing random telegraph noise in non-volatile memory by grouping and screening memory cells
US11769558B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2021 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | Apr 26, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/04
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programing a memory device having a plurality of memory cell groups where each of the memory cell group includes N non-volatile memory cells, where N is an integer greater than or equal to 2. For each memory cell group, the method includes programming each of the non-volatile memory cells in the memory cell group to a particular program state, performing multiple read operations on each of the non-volatile memory cells in the memory cell group, identifying one of the non-volatile memory cells in the memory cell group that exhibits a lowest read variance during the multiple read operations, deeply programming all of the non-volatile memory cells in the memory cell group except the identified non-volatile memory cell, and programming the identified non-volatile memory cell in the memory cell group with user data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.