Method for layer transfer with localised reduction of a capacity to initiate a fracture
US11769687B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2020 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | Feb 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for transferring a thin layer from a donor substrate to a receiver substrate including the steps of implantation of species carried out in a uniform manner on the whole of the donor substrate to form therein an embrittlement plane which delimits the thin layer and a bulk part of the donor substrate, of placing in contact the donor substrate and the receiver substrate and of initiating and propagating a fracture wave along the embrittlement plane. The method comprises, before the placing in contact, a step of localised reduction of a capacity of the embrittlement plane to initiate the fracture wave. This step of localised reduction may be carried out by means of a localised laser annealing of the donor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.