Lateral transistor with extended source finger contact
US11769807B2 · kind B2 · utility
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3References
20Claims
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Key dates
| Filing date | Oct 1, 2020 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | Jun 7, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
Semiconductor devices, such as a lateral HEMT, may display current flow between a plurality of interdigitated source fingers and drain fingers, and controlled by a common gate connection. An extended source finger contact may enable improved voltage control across the source fingers, even for large devices with many and/or lengthy source fingers. In this way, unwanted subthreshold operations and switching oscillations may be avoided by reliably maintaining a source voltage at a desired level, to thereby provide fast and reliable switching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.