Patent · US Active

Method for manufacturing an optoelectronic device with self-aligning light confinement walls

US11769856B2 · kind B2 · utility

0Cited by
10References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 19, 2019
Grant dateSep 26, 2023
Priority date
Expiry dateApr 17, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8514
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

The manufacture of an optoelectronic device includes the formation of wire-like shaped light-emitting diodes and the formation of spacing walls transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The radiation originating from each diode and directed in the direction of the adjacent diodes is blocked by the confinement wall. The upper borders of the diodes are covered by the light confinement material so as to ensure a light extraction by the rear face of the optoelectronic device. An optoelectronic device is also described as such.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.