Reactive cleaning of substrate support
US11772137B2 · kind B2 · utility
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2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2021 |
| Grant date | Oct 3, 2023 |
| Priority date | — |
| Expiry date | Aug 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/335
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods of cleaning a substrate support comprise: introducing a cleaning gas into a processing chamber containing the substrate support; applying a radio frequency (RF) power to a remote plasma source that is in fluid communication with the processing chamber to establish a reactive etching plasma from the cleaning gas in the processing chamber; reacting deposits on the substrate support with the reactive etching plasma to form a by-products phase; and evacuating the by-products phase from the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.