Bottom fed sublimation bed for high saturation efficiency in semiconductor applications
US11773485B2 · kind B2 · utility
1Cited by
16References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2023 |
| Grant date | Oct 3, 2023 |
| Priority date | — |
| Expiry date | Jan 10, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4402
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.