Patent · US Active

Image sensor for immersion lithography

US11774868B2 · kind B2 · utility

0Cited by

0References

20Claims

0Family size

Assignee

ASML NETHERLANDS B.V. · NL

Inventors

Nirupam Banerjee · Eindhoven, NL
Johan Franciscus Maria Beckers · Veldhoven, NL
Peter Brakhage · Dresden, DE
Arend Johannes Donkerbroek · Aarle-Rixtel, NL
Daniel N. Grimm · Round Rock, US
Tim Rathje · Jena, DE
Martin TILKE · Steina, DE
Sandro Wricke · Nuenen, NL

Key dates

Filing date	Apr 7, 2020
Grant date	Oct 3, 2023
Priority date	—
Expiry date	Jul 13, 2040

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70341
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

An image sensor for immersion lithography, the image sensor including: a grating; an absorber layer on the grating, the absorber layer configured to absorb radiation; and a liquidphobic coating at an upper surface of the image sensor, wherein a protective layer is provided between the absorber layer and the liquidphobic layer, the protective layer being less reactive than the absorber layer to an immersion liquid.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.