Planarization of spin-on films
US11776808B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2020 |
| Grant date | Oct 3, 2023 |
| Priority date | — |
| Expiry date | Jun 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for planarizing a substrate includes: receiving a substrate having microfabricated structures that differ in height across the working surface of the substrate that define a non-planar topography, depositing a first layer that includes a solubility-shifting agent on the working surface of the substrate by spin-on deposition in a non-planar fashion, exposing the first layer to a first pattern of actinic radiation based on the topography, developing the first layer using a predetermined solvent, and depositing a second layer over the working surface of the substrate that has a greater planarity as compared to the first layer prior to developing the first layer. The first pattern of radiation changes a solubility of the first layer such that upper regions of the non-planar topography of the first layer are soluble to the predetermined solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.