Anton J. deVilliers
200Patents
12h-index
75Co-inventors
85Inventor score
Filing activity: May 22, 2008 → Jul 18, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10586765B2 | Buried power rails | Electricity | 31 | Active |
| US9837314B2 | Self-alignment of metal and via using selective deposition | Electricity | 23 | Active |
| US8629048B1 | Methods of forming a pattern on a substrate | Electricity | 22 | Active |
| US9997598B2 | Three-dimensional semiconductor device and method of fabrication | Electricity | 21 | Active |
| US10453850B2 | Three-dimensional semiconductor device including integrated circuit, transistors and transistor components and method of fabrication | Electricity | 19 | Active |
| US10388519B2 | Method and device for incorporating single diffusion break into nanochannel structures of FET devices | Electricity | 18 | Active |
| US8273634B2 | Methods of fabricating substrates | Electricity | 18 | Active |
| US8247302B2 | Methods of fabricating substrates | Electricity | 17 | Active |
| US10833078B2 | Semiconductor apparatus having stacked gates and method of manufacture thereof | Electricity | 16 | Active |
| US8796155B2 | Methods of fabricating substrates | Electricity | 16 | Active |
| US8492282B2 | Methods of forming a masking pattern for integrated circuits | Electricity | 13 | Active |
| US8575032B2 | Methods of forming a pattern on a substrate | Electricity | 13 | Active |
| US10573655B2 | Three-dimensional semiconductor device and method of fabrication | Electricity | 12 | Active |
| US8871646B2 | Methods of forming a masking pattern for integrated circuits | Electricity | 12 | Active |
| US10529830B2 | Extension region for a semiconductor device | Electricity | 12 | Active |
| US10734224B2 | Method and device for incorporating single diffusion break into nanochannel structures of FET devices | Electricity | 11 | Active |
| US9645495B2 | Critical dimension control in photo-sensitized chemically-amplified resist | Physics | 10 | Active |
| US10770479B2 | Three-dimensional device and method of forming the same | Electricity | 9 | Active |
| US9240329B2 | Method for multiplying pattern density by crossing multiple patterned layers | Electricity | 9 | Active |
| US10622233B2 | Amelioration of global wafer distortion based on determination of localized distortions of a semiconductor wafer | Physics | 8 | Active |
| US10714391B2 | Method for controlling transistor delay of nanowire or nanosheet transistor devices | Electricity | 8 | Active |
| US9718082B2 | Inline dispense capacitor | Emerging Cross-Sectional Technologies | 8 | Active |
| US9818611B2 | Methods of forming etch masks for sub-resolution substrate patterning | Electricity | 8 | Active |
| US8815752B2 | Methods of forming features in semiconductor device structures | Electricity | 8 | Active |
| US8288083B2 | Methods of forming patterned masks | Electricity | 7 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.