Patent · US Active

Semiconductor device including a solder compound containing a compound Sn/Sb

US11776927B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Behrens · Madison, US
Alexander Heinrich · Bad Abbach, DE
Evelyn Napetschnig · Diex, AT
Bernhard Weidgans · Bernhardswald, DE
Catharina Wille · Regensburg, DE
Christina Yeong · Kluang, MY

Key dates

Filing date	Jul 15, 2021
Grant date	Oct 3, 2023
Priority date	—
Expiry date	Mar 25, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3651
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and method is disclosed. In one embodiment, the semiconductor device comprises a semiconductor die comprising a first surface and a second surface opposite to the first surface, a first metallization layer disposed on the first surface of the semiconductor die, a first solder layer disposed on the first metallization layer, wherein the first solder layer contains the compound Sn/Sb, and a first contact member comprising a Cu-based base body and a Ni-based layer disposed on a main surface of the Cu-based base body, wherein the first contact member is connected with the Ni-based layer to the first solder layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.