Compensation for substrate doping for in-situ electromagnetic inductive monitoring
US11780045B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2019 |
| Grant date | Oct 10, 2023 |
| Priority date | — |
| Expiry date | Jul 19, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B7/105
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of chemical mechanical polishing includes bringing a substrate having a conductive layer disposed over a semiconductor wafer into contact with a polishing pad, generating relative motion between the substrate and the polishing pad, monitoring the substrate with an in-situ electromagnetic induction monitoring system as the conductive layer is polished to generate a sequence of signal values that depend on a thickness of the conductive layer, determining a sequence of thickness values for the conductive layer based on the sequence of signal values, and at least partially compensating for a contribution of conductivity of the semiconductor wafer to the signal values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.