Differential capacitive sensors for in-situ film thickness and dielectric constant measurement
US11781214B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2019 |
| Grant date | Oct 10, 2023 |
| Priority date | — |
| Expiry date | Mar 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods and apparatus for a processing chamber are provided herein. The apparatus includes, for example, an inner volume defined in the processing chamber; a first sensor assembly coupled to a surface located in the inner volume of the processing chamber and including a first electrode configuration configured to measure an electrical characteristic associated with a film deposited within the inner volume of the processing chamber; and a second sensor assembly coupled to the surface located in the inner volume of the processing chamber in relative proximity to the first sensor assembly and including a second electrode configuration, different from the first electrode configuration, configured to measure the same electrical characteristic as the first electrode configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.