Proactive edge word line leak detection for memory apparatus with on-pitch semi-circle drain side select gate technology
US11783903B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2021 |
| Grant date | Oct 10, 2023 |
| Priority date | — |
| Expiry date | Jan 6, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3404
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory apparatus and method of operation are provided. The apparatus includes memory cells connected to one of a plurality of word lines and arranged in strings and configured to retain a threshold voltage. A control means is coupled to the plurality of word lines and the strings. The control means is configured to apply a primary predetermined voltage to a primary location of the memory apparatus following an erase operation of the memory cells while simultaneously applying a secondary predetermined voltage being lower than the primary predetermined voltage to a secondary location of the memory apparatus and measuring a leak current at the primary location. The control means then determines the erase operation passed in response to the leak current measured not being greater than a predetermined leak threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.