Residue removal during semiconductor device formation
US11791152B2 · kind B2 · utility
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4References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 10, 2021 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Dec 3, 2041 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C1/00849
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an example, a method may include removing a material from a structure to form an opening in the structure, exposing a residue, resulting from removing the material, to an alcohol gas to form a volatile compound, and removing the volatile compound by vaporization. The structure may be used in semiconductor devices, such as memory devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.