Etching method and etching apparatus
US11791175B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | May 13, 2021 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | May 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method for selectively etching a material containing Si and O is provided. The etching method includes providing a substrate containing the material containing Si and O in a chamber, repeating a first period for supplying a basic gas, which is started first, and a second period for supplying a fluorine-containing gas, which is started next, with at least a part of the second period not overlapping with the first period, and heating and removing a reaction product generated by the supply of the basic gas and the supply of the fluorine-containing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.