Systems for producing a single crystal silicon ingot using a vaporized dopant
US11795569B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2020 |
| Grant date | Oct 24, 2023 |
| Priority date | — |
| Expiry date | May 18, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1056
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An ingot puller apparatus for producing a doped single crystal silicon ingot includes a housing defining a chamber, a crucible disposed within the chamber, and a dopant injector extending into the housing. The dopant injector includes a delivery module attached to and extending through the housing into the chamber. The delivery module includes a dopant injection tube positioned within the chamber and a vaporization cup positioned within the dopant injection tube and the chamber. The second valve selectively channels the liquid dopant into the vaporization cup and the vaporization cup vaporizes the liquid dopant into a vaporized dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.