Lateral bipolar transistor structure with marker layer for emitter and collector

US11799021B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Vibhor Jain · Williston, US
• Alexander M. Derrickson · Troy, US
• Judson R. Holt · Wappingers Falls, US

Key dates

• Filing date: Oct 14, 2021
• Grant date: Oct 24, 2023
• Expiry date: Nov 11, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/401

Abstract

Embodiments of the disclosure provide a lateral bipolar transistor structure with a marker layer for emitter and collector terminals. A lateral bipolar transistor structure according to the disclosure includes a semiconductor layer over an insulator layer. The semiconductor layer includes an emitter/collector (E/C) region having a first doping type and an intrinsic base region adjacent the E/C region and having a second doping type opposite the first doping type. A marker layer is on the E/C region of the semiconductor layer, and a raised E/C terminal is on the marker layer. An extrinsic base is on the intrinsic base region of the semiconductor layer, and a spacer is horizontally between the raised E/C terminal and the extrinsic base.