Phase-change memory with an insulating layer on a cavity sidewall

US11800821B2 · kind B2 · utility

Assignees

• STMicroelectronics (Crolles 2) SAS · FR
• STMicroelectronics (Rousset) SAS · FR

Inventors

• Philippe Boivin · Venelles, FR
• Daniel Benoit · Alameda, US
• Remy BERTHELON · Crolles, FR

Key dates

• Filing date: Jul 1, 2022
• Grant date: Oct 24, 2023
• Expiry date: Jul 1, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8413

Abstract

The present disclosure concerns a phase-change memory manufacturing method and a phase-change memory device. The method includes forming a first insulating layer in cavities located vertically in line with strips of phase-change material, and anisotropically etching the portions of the first insulating layer located at the bottom of the cavities; and a phase-change memory device including a first insulating layer against lateral walls of cavities located vertically in line with strips of phase-change material.