Method for determining root cause affecting yield in a semiconductor manufacturing process
US11803127B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2019 |
| Grant date | Oct 31, 2023 |
| Priority date | — |
| Expiry date | Jan 15, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05B2219/45031
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.