High-throughput dry etching of films containing silicon-oxygen components or silicon-nitrogen components by proton-mediated catalyst formation
US11804380B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2021 |
| Grant date | Oct 31, 2023 |
| Priority date | — |
| Expiry date | Oct 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of high-throughput dry etching of a film by proton-mediated catalyst formation. The method includes providing a substrate having a film thereon containing silicon-oxygen components, silicon-nitrogen components, or both, introducing an etching gas in the process chamber, plasma-exciting the etching gas, and exposing the film to the plasma-excited etching gas to etch the film. In one example, the etching gas contains at least three different gases that include a fluorine-containing gas, a hydrogen-containing gas, and a nitrogen-containing gas, plasma-exciting the etching gas. In another example, the etching gas contains at least four different gases that include a fluorine-containing gas, a hydrogen-containing gas, an oxygen-containing gas, and a silicon-containing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.