Semiconductor device with polymer-based insulating material and method of producing thereof

US11804432B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Markus Zundel · Egmating, DE
• Sergey Ananiev · Ottobrunn, DE
• Andreas Behrendt · Villach, AT
• Holger Doepke · Sinzing, DE
• Uwe Schmalzbauer · Neubiberg, DE
• Michael Sorger · Villach, AT
• Dominic Thurmer · Dresden, DE

Key dates

• Filing date: Feb 11, 2021
• Grant date: Oct 31, 2023
• Expiry date: May 5, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a semiconductor substrate having a first main surface and a metal structure above the first main surface. The metal structure has a periphery region that includes a transition section along which the metal structure transitions from a first thickness to a second thickness less than the first thickness. A polymer-based insulating material contacts and covers at least the periphery region of the metal structure. A thickness of the polymer-based insulating material begins to increase on a first main surface of the metal structure that faces away from the semiconductor substrate and continues to increase in a direction towards the transition section. An average slope of a surface of the polymer-based insulating material which faces away from the semiconductor substrate, as measured with respect to the first main surface of the metal structure, is less than 60 degrees along the periphery region of the metal structure.