Annular bipolar transistors
US11804542B2 · kind B2 · utility
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1References
20Claims
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Key dates
| Filing date | Dec 21, 2021 |
| Grant date | Oct 31, 2023 |
| Priority date | — |
| Expiry date | Feb 10, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to annular bipolar transistors and methods of manufacture. The structure includes: a substate material; a collector region parallel to and above the substrate material; an intrinsic base region surrounding the collector region; an emitter region above the intrinsic base region; and an extrinsic base region contacting the intrinsic base region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.