Photoresist compositions and pattern formation methods
US11809077B2 · kind B2 · utility
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4References
11Claims
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Key dates
| Filing date | Mar 11, 2021 |
| Grant date | Nov 7, 2023 |
| Priority date | — |
| Expiry date | Oct 13, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/11
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist composition comprises a first polymer formed by free radical polymerization. The first polymer comprises polymerized units formed from a monomer that comprises an ethylenically unsaturated double bond and an acid-labile group; a photoacid generator; a quencher of formula (1): and a solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.