Etching method and substrate processing apparatus
US11810792B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2021 |
| Grant date | Nov 7, 2023 |
| Priority date | — |
| Expiry date | Jan 4, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method includes mounting a substrate on a stage in a processing chamber, the substrate including a laminate film. The etching method includes supplying process gas to the processing chamber, the process gas including at least one of fluorocarbon gas or hydrofluorocarbon gas. The etching method includes selecting, based on a combination of material of a silicon-containing insulating layer and material of an underlying layer, a surface temperature range of at least one member of a first member or a second member in the processing chamber, the first member facing the substrate, and the second member being provided to encircle the substrate. The etching method includes adjusting a surface temperature of the one member to be within the selected surface temperature range. The etching method includes forming a plasma in the processing chamber to which the process gas is supplied, thereby etching the silicon-containing insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.