Method for filling a gap in a three-dimensional structure on a semiconductor substrate
US11814728B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2021 |
| Grant date | Nov 14, 2023 |
| Priority date | — |
| Expiry date | Jul 31, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.