Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
US11815806B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2022 |
| Grant date | Nov 14, 2023 |
| Priority date | — |
| Expiry date | Nov 18, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2004
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.