Semiconductor device and method for fabricating the same
US11818960B2 · kind B2 · utility
1Cited by
5References
9Claims
0Family size
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Key dates
| Filing date | Aug 5, 2021 |
| Grant date | Nov 14, 2023 |
| Priority date | — |
| Expiry date | Oct 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
Abstract
A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a top electrode on the MTJ, a trapping layer in the top electrode for trapping hydrogen, a first inter-metal dielectric (IMD) layer on the MTJ, and a first metal interconnection in the first IMD layer and on the top electrode. Preferably, a top surface of the trapping layer is lower than a bottom surface of the first IMD layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.