Semiconductor device and method for fabricating the same
US11818965B2 · kind B2 · utility
1Cited by
8References
13Claims
0Family size
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Key dates
| Filing date | Jul 19, 2022 |
| Grant date | Nov 14, 2023 |
| Priority date | — |
| Expiry date | Jul 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate comprising a MTJ region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region, and a contact plug on the logic region. Preferably, the MTJ includes a bottom electrode layer having a gradient concentration, a free layer on the bottom electrode layer, and a top electrode layer on the free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.