Embedded high-Z marker material and process for alignment of multilevel ebeam lithography
US11823864B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2020 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | Jan 11, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54453
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
One or more embodiments of the present disclosure are directed toward improved methods of fabricating a semiconductor device utilizing multi-level electron beam lithography (e-beam lithography), an alignment marker for multi-level e-beam lithography, and a semiconductor device including the alignment marker. A method of fabricating a semiconductor device may include: forming an alignment marker in a substrate, the alignment marker including tantalum; determining, utilizing a backscatter electron detector of an electron beam lithography tool, a location of an edge of the alignment marker based on an atomic number contrast between the alignment marker and the substrate; and forming, utilizing the electron beam lithography tool, at least one transistor in the substrate based on the location of the edge of the alignment marker.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.