Thin film forming method
US11823866B2 · kind B2 · utility
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2,211References
14Claims
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Key dates
| Filing date | Mar 30, 2021 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | Dec 31, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing method for filling a gap without seams or voids comprising: providing a substrate with a gap in a reaction chamber, pumping down the reaction chamber to a pressure at or below 5 Torr and filling the gap with a film by alternately and sequentially supplying a precursor, a reactant and a radio frequency electromagnetic radiation comprising a relatively high radio frequency component and a relatively low radio frequency component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.