Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures
US11823892B2 · kind B2 · utility
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3References
24Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 26, 2019 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | Dec 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68764
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the substrate after the first rinsing liquid is dispensed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.