Silicon single crystal substrate and silicon epitaxial wafer for solid-state image sensor and solid-state image sensor
US11824070B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Nov 4, 2020 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | May 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/805
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention is a silicon single crystal substrate for a solid-state image sensor obtained by slicing a silicon single crystal fabricated by a CZ method, where the silicon single crystal substrate is a p-type silicon single crystal substrate whose main dopant is Ga, and the silicon single crystal substrate has a B concentration of 5×1014 atoms/cm3 or less. This provides a silicon single crystal substrate and a silicon epitaxial wafer for a solid-state image sensor that can suppress the residual image characteristics of a solid-state image sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.